PART |
Description |
Maker |
HM62W16258BLTT/BLTT-XXSL |
Low Power SRAMs
|
Hitachi Semiconductor
|
HM62V16258BLTT/BLTT-XXSL |
Low Power SRAMs
|
Hitachi Semiconductor
|
HM62V8512CLTT/CLTT-XXSL HM62V8512CLFP/LFP-XXSL HM6 |
Low Power SRAMs
|
Hitachi Semiconductor
|
N04L1630C2BT2 N04L1630C2B N04L1630C2BB2 N04L1630C2 |
256K X 16 STANDARD SRAM, 70 ns, PDSO44 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 】 16 bit POWER SAVER TECHNOLOGY TM 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM
|
ON SEMICONDUCTOR AMI[AMI SEMICONDUCTOR]
|
N64S0818HDA N64S0830HDA N64S08XXHDA |
64Kb Low Power Serial SRAMs 8K × 8 bit Organization 64Kb Low Power Serial SRAMs 8K 8 bit Organization 64Kb Low Power Serial SRAMs 8K 】 8 bit Organization
|
AMI SEMICONDUCTOR
|
N25S830HA |
256Kb Low Power Serial SRAMs 32K X 8 bit Organization
|
ON Semiconductor
|
N25S818HA |
256Kb Low Power Serial SRAMs 32K X 8 bit Organization
|
ON Semiconductor
|
N64S818HAT21I N64S818HAT21IT |
64 kb Low Power Serial SRAMs
|
ON Semiconductor
|
GS816273C-250 GS816273C-250I GS816273C-225 GS81627 |
18Mb Burst SRAMs 256K x 72 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
IDT71V65803S133BG IDT71V65803S100BQ IDT71V65803S10 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 3.8 ns, PQFP100 256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
GS864032T-167IV GS864032T-200IV GS864032T-200V GS8 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 8 ns, PQFP100 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 7.5 ns, PQFP100 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4米1800万3200万36 72Mb同步突发静态存储器
|
GSI Technology, Inc.
|